Graphene resistive random memory — the promising memory device in next generation

Wang Xue-Feng^{1, 2}, Zhao Hai-Ming^{1, 2}, Yang Yi^{1, 2, †}, Ren Tian-Ling^{1, 2, ‡}

(color online) (a) The structure of PCMO/GO RRAM. (b) I–V characteristics of this device. The inset is I–V properties of RRAM without PCMO layer, which has a large SET voltage. (c), (d) Repeatability and endurance properties of PCMO/GO RRAM in HRS and LRS. The figure is reproduced from Ref. [113].