Graphene resistive random memory — the promising memory device in next generation

Wang Xue-Feng^{1, 2}, Zhao Hai-Ming^{1, 2}, Yang Yi^{1, 2, †}, Ren Tian-Ling^{1, 2, ‡}

(color online) (a) The structure of flexible Al/GO/Al RRAM. (b) I–V curve of the device. (c) The bending time test for the RRAM. (d) Bending radius test in HRS and LRS. (e) The retention properties of the RRAM. (f) The endurance properties of GO RRAM. The figure is reproduced from Ref. [108].