Graphene resistive random memory — the promising memory device in next generation

Wang Xue-Feng^{1, 2}, Zhao Hai-Ming^{1, 2}, Yang Yi^{1, 2, †}, Ren Tian-Ling^{1, 2, ‡}

(color online) (a) The relation between the resistance in LRS and temperature in Ag/HfO₂/rGO RRAM. (b) The forming process for the Ag-based RRAM, indicating low forming voltage needed. (c), (d) I–V curves of Pt/HfO₂/rGO under Pt and rGO as top electrode, respectively. The figure is reproduced from Ref. [90].