Graphene resistive random memory — the promising memory device in next generation

Wang Xue-Feng^{1, 2}, Zhao Hai-Ming^{1, 2}, Yang Yi^{1, 2, †}, Ren Tian-Ling^{1, 2, ‡}

(color online) (a) The structure of Ag/HfO₂/rGO RRAM on PET substrate. (b) I–V curve of the device in the first cycle, 50th cycle, and 100th cycle. (c) I–V curve of the device under different current compliance, showing the potential for multilevel switching application. (d) The switching cycle test of the device in HRS and LRS. (e) The endurance test of the device. The figure is reproduced from Ref. [90].