Graphene resistive random memory — the promising memory device in next generation

Wang Xue-Feng^{1, 2}, Zhao Hai-Ming^{1, 2}, Yang Yi^{1, 2, †}, Ren Tian-Ling^{1, 2, ‡}

(color online) (a) The structure of gated Al/AlO_x/BLG/Au RRAM, where Al is used as top electrode, Au as bottom electrode, and Si as gate electrode. (b)–(d) I–V curves at different gate voltages, indicating the SET voltage and HRS/LRS ratio modulated by the gate voltage. (e), (f) The SET voltage changing trend varying with the gate. The figure is reproduced from Ref. [77].