Graphene resistive random memory — the promising memory device in next generation

Wang Xue-Feng^{1, 2}, Zhao Hai-Ming^{1, 2}, Yang Yi^{1, 2, †}, Ren Tian-Ling^{1, 2, ‡}

(color online) NiO/graphene RRAMs with (a) vertical and (b) plane structure. (c) I–V curve comparison among RRAMs fabricated with NiO film, NiO dot, and NiO dot/graphene in vertical structure. (d) The repeating test results in vertical structure. Panels (a), (c), and (d) are reproduced from Ref. [69].