Graphene resistive random memory — the promising memory device in next generation

Wang Xue-Feng^{1, 2}, Zhao Hai-Ming^{1, 2}, Yang Yi^{1, 2, †}, Ren Tian-Ling^{1, 2, ‡}

(color online) The change of graphene G peak and 2D peak Raman shift after repeating the SET and RESET process. The figure is reproduced from Ref. [51].