Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells
Liu Shitao1, Quan Zhijue2, Wang Li1, †
       

(color online) The schematic diagrams of electron transport. ① and ② mean the carriers produced in flat QW and sidewall QW. There are two ways to escape by either tunneling or thermionic emission. Some carriers produced in flat QW will overcome the energy barriers for the lateral transport to enter sidewall QW, as noted by ③. T: tunneling, TE: thermionic emission. The black solid circles imply electrons.