Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates
He Yang1, 2, Sun Yu-run1, Zhao Yongming1, 2, Yu Shuzhen1, Dong Jianrong1, †
       

Symmetric (004) RSM of (a) sample A and (b) sample B with projection of the incident beam on (001) surface along the [110] direction.