Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices<xref rid="cpb_26_3_037307fn1" ref-type="fn">*</xref> <fn id="cpb_26_3_037307fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11404118, 61574066, and 61390504).</p> </fn>

Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 11404118, 61574066, and 61390504).

Li Xuefei¹, Xiong Xiong^², Wu Yanqing^{1, 2, †}

(color online) (a) Schematics of the device structure. A heavily doped silicon wafer capped with 285 nm SiO is used as the global back gate and the gate dielectric. Few-layer black phosphorus flakes were exfoliated onto monolayer MoS in order to form a van der Waals heterojunction. (b) Photodetection R calculated as a function of incident power.^[110]