Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices<xref rid="cpb_26_3_037307fn1" ref-type="fn">*</xref> <fn id="cpb_26_3_037307fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11404118, 61574066, and 61390504).</p> </fn>

Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 11404118, 61574066, and 61390504).

Li Xuefei¹, Xiong Xiong^², Wu Yanqing^{1, 2, †}

(color online) (a) Responsivity versus excitation wavelength at constant power (red squares) of a BP photodetector. The dashed red line is a linear fit to the data.^[103] (b) Photocurrent measured in one period of modulation of the light intensity ( nm, W, mV). We can estimate a rise (fall) time of 1 ms (4 ms).^[103] (c) R of the device at different incident laser power at 900 nm wavelength at room temperature and low temperature.^[105] (d) Photoresponsivity of the different channel length devices under the same driving voltage.^[105]