Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices<xref rid="cpb_26_3_037307fn1" ref-type="fn">*</xref> <fn id="cpb_26_3_037307fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11404118, 61574066, and 61390504).</p> </fn>

Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 11404118, 61574066, and 61390504).

Li Xuefei¹, Xiong Xiong^², Wu Yanqing^{1, 2, †}

(color online) (a) Transfer characteristics of the BP FET device in vacuum before exposure (black curve) and directly after breaking the vacuum (red curve) taken at mV. Inset shows an optical image of a BP flake before longterm ambient exposure (scale bar is 10 μm).^[78] (b) Transfer characteristics at selected times over the first hour of exposure.^[78] (c) Time dependence of the integrated intensity of the A Raman mode in different conditions: air, vacuum, mixture of O and H O, and in air but encapsulated under a 300 nm layer of parylene cap.^[85]