Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices*

Project supported by the National Natural Science Foundation of China (Grant Nos. 11404118, 61574066, and 61390504).
Li Xuefei1, Xiong Xiong2, Wu Yanqing1, 2, †
       

(color online) (a) Schematic cross-sectional view of the BP FET structure with a h-BN substrate.[73] (b) (black) and (red) measured as a function of with magnetic field fixed at B = 31 T and T = 0.3 K. Spin degeneracy is lifted at each LL, and the arrows indicate the spin-up and spin-down LLs.[73] (c) Schematic of the BN–BP–BN heterostructure device, the purple-dashed line denotes the lower BN layer.[74] (d) Temperature dependence of the field-effect (open dots) and Hall mobility (solid dots) at V of 15-nm-thick sample. The dashed lines serve as guidelines for the relation.[74] (e) plotted as a function of 1/B at V for different temperatures.