Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices<xref rid="cpb_26_3_037307fn1" ref-type="fn">*</xref> <fn id="cpb_26_3_037307fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11404118, 61574066, and 61390504).</p> </fn>

Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 11404118, 61574066, and 61390504).

Li Xuefei¹, Xiong Xiong^², Wu Yanqing^{1, 2, †}

(color online) Radio-frequency performance of the BP RF transistor. The short-circuit current gain , MSG/MAG, and unilateral power gain U of the 300 nm channel length device (a) before and (b) after de-embedding.^[67] (c) Short-circuit current gain before (extrinsic) and after (intrinsic) standard de-embedding of the 500 nm channel length device.^[68] (d) Unilateral power gain, U, featuring extrinsic and intrinsic and 14.5 GHz of the 500 nm channel length device.^[68]