Transparent conducting indium-tin-oxide (ITO) film as full front electrode in III–V compound solar cell<xref rid="cpb_26_3_037305fn1" ref-type="fn">*</xref><fn id="cpb_26_3_037305fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61534008, 61376081, and 61404157) and the Application Foundation of Suzhou, China (Grant No. SYG201437).</p></fn>

Transparent conducting indium-tin-oxide (ITO) film as full front electrode in III–V compound solar cell**

Project supported by the National Natural Science Foundation of China (Grant Nos. 61534008, 61376081, and 61404157) and the Application Foundation of Suzhou, China (Grant No. SYG201437).

Dai Pan, Lu Jianya, Tan Ming, Wang Qingsong, Wu Yuanyuan, Ji Lian, Bian Lifeng, Lu Shulong^†, Yang Hui

The contacting resistance of n-GaAs with ITO as a function of the carrier concentration of n-GaAs. The inset shows room temperature RT Hall mobility of n-type GaAs as a function of the carrier concentration.