Band structure of silicon and germanium thin films based on first principles<xref rid="cpb_26_3_037302fn1" ref-type="fn">*</xref> <fn id="cpb_26_3_037302fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11264007 and 61465003).</p></fn>

Band structure of silicon and germanium thin films based on first principles* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 11264007 and 61465003).

Wu Xue-Ke^{¹, ²}, Huang Wei-Qi^{², †}, Huang Zhong-Mei^³, Qin Chao-Jian^⁴, Dong Tai-Ge^², Wang Gang^², Tang Yan-Lin^{², ‡}

(color online) The energy level of Γ point in conduction band and CBM of (a) Ge (111), (b) Ge (110), and (c) Ge (100) nanofilms changing with the increasing thickness of films.