Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

Wang Lei¹, Zhang Jiaqi¹, Li Liuan^{2, ‡}, Maeda Yutaro¹, Ao Jin-Ping^{1, †}

(color online) Dependence of the ohmic contact resistance ( ) and the wafer sheet resistance ( ) on the annealing time when annealed at 500 °C.