Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors
Wang Lei1, Zhang Jiaqi1, Li Liuan2, ‡, Maeda Yutaro1, Ao Jin-Ping1, †
       

(color online) The dependency of mobility and sheet density on residual AlGaN barrier thickness. Inset is the corresponding transfer characteristics of transistors fabricated on the recessed surface.