Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

Wang Lei¹, Zhang Jiaqi¹, Li Liuan^{2, ‡}, Maeda Yutaro¹, Ao Jin-Ping^{1, †}

(color online) The dependency of mobility and sheet density on residual AlGaN barrier thickness. Inset is the corresponding transfer characteristics of transistors fabricated on the recessed surface.