Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

Wang Lei¹, Zhang Jiaqi¹, Li Liuan^{2, ‡}, Maeda Yutaro¹, Ao Jin-Ping^{1, †}

(color online) Ohmic contact resistance ( ) and sheet resistance ( ) of the samples with different residual AlGaN thickness.