Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors
Wang Lei1, Zhang Jiaqi1, Li Liuan2, ‡, Maeda Yutaro1, Ao Jin-Ping1, †
       

(color online) Current–voltage (IV) characteristics recorded on the TLM patterns with an interval of 5 μm. Inset: residual AlGaN thickness is 8.2 nm.