Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors
Wang Lei
1
, Zhang Jiaqi
1
, Li Liuan
2, ‡
, Maeda Yutaro
1
, Ao Jin-Ping
1, †
(color online) Cross sectional view of the devices fabricated on an entirely-treated surface.