Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors*
Wang Jianlu †, Hu Weida ‡
       

(color online) (a) Sample geometry of GFeFETs.[55] (b) R vs of one sample after PVDF coating. The red open square and black solid lines are the experimental and fitting results, respectively. Inset: atomic force microscopy of the sample after PVDF. Color scale: 0-164 nm. (c), (d) Writing 1 by using .[55] (e), (f) Writing 0 by using . Dashed and solid arrows indicate the forward and backward voltage sweep directions, respectively.[55]