Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors<xref rid="cpb_26_3

Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors*

Wang Jianlu^†, Hu Weida^‡

(color online) (a) FET structure with traditional p-type semiconductor channel. (b) FeFET structure with 2D material channel and ferroelectric gate dielectrics.