Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study

Li Wenbo¹, Li Ling², Wang Fangfang², Zheng Liu², Xia Jinghua², Qin Fuwen³, Wang Xiaolin¹, Li Yongping², Liu Rui², Wang Dejun¹, Pan Yan^{2, ‡}, Yang Fei^{2, 4, §}

(color online) Total densities of states for the clean surface and surfaces with 1/9 ML, 1/3 ML, and 4/9 ML phosphorus coverages.