Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study
Li Wenbo1, Li Ling2, Wang Fangfang2, Zheng Liu2, Xia Jinghua2, Qin Fuwen3, Wang Xiaolin1, Li Yongping2, Liu Rui2, Wang Dejun1, Pan Yan2, ‡, Yang Fei2, 4, §
       

(color online) Adsorption energy per phosphorus adatom as a function of phosphorus chemical potential.