Electrical property effect of oxygen vacancies in the heterojunction of LaGaO3/SrTiO3

Electrical property effect of oxygen vacancies in the heterojunction of LaGaO₃/SrTiO₃

Wang Fu-Ning, Li Ji-Chao^†, Zhang Xin-Miao, Liu Han-Zhang, Liu Jian, Wang Chun-Lei, Zhao Ming-Lei, Su Wen-Bin, Mei Liang-Mo

The orbital decomposed DOSs for (a) the interfacial Ti atom and (b) the Ti atom nearest to the V_O in the 3^rd layer of STO for the defective (LGO)₇/(STO)₅ heterojunction.