Electrical property effect of oxygen vacancies in the heterojunction of LaGaO3/SrTiO3
Wang Fu-Ning, Li Ji-Chao †, Zhang Xin-Miao, Liu Han-Zhang, Liu Jian, Wang Chun-Lei, Zhao Ming-Lei, Su Wen-Bin, Mei Liang-Mo
       

(color online) Partial densities of states grouped by layers of (a) LGO and (b) STO for the defective (LGO)7/(STO)5 slab with one VO in 3rd layer of STO and (c) STO for the ideal slab. The vertical dash line indicates the Fermi energy located at 0 eV.