Electrical property effect of oxygen vacancies in the heterojunction of LaGaO3/SrTiO3

Electrical property effect of oxygen vacancies in the heterojunction of LaGaO₃/SrTiO₃

Wang Fu-Ning, Li Ji-Chao^†, Zhang Xin-Miao, Liu Han-Zhang, Liu Jian, Wang Chun-Lei, Zhao Ming-Lei, Su Wen-Bin, Mei Liang-Mo

(color online) (a) Relative displacements between the cations and the oxygen anions in each layer for the ideal (LGO)₇/(STO)₅ slab. (b) Rotation angle of the oxygen octahedron along the stacking direction for the defective (LGO)₇/(STO)₅ slab with one V_O in the 3^rd layer of STO. (c) AFD distortions for the defective heterojunction.