Electrical property effect of oxygen vacancies in the heterojunction of LaGaO3/SrTiO3
Wang Fu-Ning, Li Ji-Chao †, Zhang Xin-Miao, Liu Han-Zhang, Liu Jian, Wang Chun-Lei, Zhao Ming-Lei, Su Wen-Bin, Mei Liang-Mo
       

The formation energy of the VO in the STO overlayers. The designations of the layers are marked in Fig. 1.