A review for compact model of graphene field-effect transistors<xref rid="cpb_26_3_036804fn1" ref-type="fn">*</xref> <fn id="cpb_26_3_036804fn1"> <label>*</label> <p>Project supported by the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, the National Natural Science Foundation of China (Grant No. 61574166), the National Basic Research Program of China (Grant No. 2013CBA01604), the National Key Research and Development Program of China (Grant No. 2016YFA0201802), and the Beijing Training Project for the Leading Talents in S&T, China (Grant No. Z151100000315008).</p> </fn>

A review for compact model of graphene field-effect transistors* *

Project supported by the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, the National Natural Science Foundation of China (Grant No. 61574166), the National Basic Research Program of China (Grant No. 2013CBA01604), the National Key Research and Development Program of China (Grant No. 2016YFA0201802), and the Beijing Training Project for the Leading Talents in S&T, China (Grant No. Z151100000315008).

Lu Nianduan^{¹
,
²
,
³}, Wang Lingfei^{¹
,
³}, Li Ling^{¹
,
²
,
³
, †}, Liu Ming^{¹
,
²
,
³}

(color online) Output characteristics obtained from the analytical model (solid lines) compared with experimental results (symbols) from Ref. [35]. Inset: quantum capacitance voltage drop as a function of the source-drain voltage for different gate voltage overdrive.^[42]