A review for compact model of graphene field-effect transistors*

Project supported by the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, the National Natural Science Foundation of China (Grant No. 61574166), the National Basic Research Program of China (Grant No. 2013CBA01604), the National Key Research and Development Program of China (Grant No. 2016YFA0201802), and the Beijing Training Project for the Leading Talents in S&T, China (Grant No. Z151100000315008).
Lu Nianduan 1 , 2 , 3 , Wang Lingfei 1 , 3 , Li Ling 1 , 2 , 3 , †, Liu Ming 1 , 2 , 3
       

(color online) Current–voltage characteristics of GFET device. Drain current as a function of source-to-drain voltage (a) for GFET A at V, −0.3 V, −0.5 V and (b) for GFET B at V, −0.5 V, −1.5 V, −2.5 V (from bottom to top), respectively. Both measured (solid curves) and simulated (dashed curves) results are shown. Inset is the equivalent circuit for the corresponding compact model of GFET.[34]