A review for compact model of graphene field-effect transistors*

Project supported by the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, the National Natural Science Foundation of China (Grant No. 61574166), the National Basic Research Program of China (Grant No. 2013CBA01604), the National Key Research and Development Program of China (Grant No. 2016YFA0201802), and the Beijing Training Project for the Leading Talents in S&T, China (Grant No. Z151100000315008).
Lu Nianduan 1 , 2 , 3 , Wang Lingfei 1 , 3 , Li Ling 1 , 2 , 3 , †, Liu Ming 1 , 2 , 3
       

(color online) (a) Measured I–V characteristic at V and V in GFET devices. Three points (I, II, and III) are indentified in the I–V curve. (b) Schematic demonstration of the carrier concentration under the top-gated region. At point I ( , , here means the of “kink” between I and II, or II and III in panel (a)), the channel charge at the drain end begins to decrease as the minimal density point enters the channel. At point II ( ), the minimal density point forms at the drain. For (point III), an electron channel forms at the drain.[35]