A review for compact model of graphene field-effect transistors<xref rid="cpb_26_3_036804fn1" ref-type="fn">*</xref> <fn id="cpb_26_3_036804fn1"> <label>*</label> <p>Project supported by the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, the National Natural Science Foundation of China (Grant No. 61574166), the National Basic Research Program of China (Grant No. 2013CBA01604), the National Key Research and Development Program of China (Grant No. 2016YFA0201802), and the Beijing Training Project for the Leading Talents in S&T, China (Grant No. Z151100000315008).</p> </fn>

A review for compact model of graphene field-effect transistors* *

Project supported by the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, the National Natural Science Foundation of China (Grant No. 61574166), the National Basic Research Program of China (Grant No. 2013CBA01604), the National Key Research and Development Program of China (Grant No. 2016YFA0201802), and the Beijing Training Project for the Leading Talents in S&T, China (Grant No. Z151100000315008).

Lu Nianduan^{¹
,
²
,
³}, Wang Lingfei^{¹
,
³}, Li Ling^{¹
,
²
,
³
, †}, Liu Ming^{¹
,
²
,
³}

(color online) Cross-section of (a) a n-channel MOSFET and (b) a top-gated graphene FET, (c) MOSFET transfer characteristics showing (on a logarithmic scale on the left and a linear scale on the right) versus the gate-source voltage ( ), and (d) transfer characteristics curves for two GFETs with large-area-graphene channel.^[11]