Photodetecting and light-emitting devices based on two-dimensional materials
Yu Yuanfang1, Miao Feng2, ‡, He Jun3, §, Ni Zhenhua1, †
       

(color online) (a) A pseudo-colored scanning electron microscopy (SEM) image of the silicon/graphene high-gain photodetector (top left). Photocurrent map at incident power of 17 nW shows bright photocurrent signal in the silicon/graphene region (bottom left). Photoresponsivity of the device (inset) as a function of incident power (right).[35] (b) Schematic diagram and optical image of the graphene hybrid photodetector on lightly p-doped silicon/SiO2 substrate (left). Responsivity at VD = 1 V and VG = 0 V of the device as a function of the light power (right). The transient response of the device switched on or off by an acoustic optical modulator with frequency of 10 kHz. P = ∼ 0.5 μW, VD = 1 V, and VG = 0 V (inset).[37]