Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs

Fan Shuang^{1, 2}, Hu Zhi-Yuan^{1, †}, Zhang Zheng-Xuan¹, Ning Bing-Xu¹, Bi Da-Wei¹, Dai Li-Hua^{1, 2}, Zhang Meng-Ying^{1, 2}, Zhang Le-Qing^{1, 2}

(color online) Cross-section of simulated electric field in SOI NMOSFET with the BBT model. Trapped charge density is , , , and the substrate and source are grounded.