Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs
Fan Shuang
1, 2
, Hu Zhi-Yuan
1, †
, Zhang Zheng-Xuan
1
, Ning Bing-Xu
1
, Bi Da-Wei
1
, Dai Li-Hua
1, 2
, Zhang Meng-Ying
1, 2
, Zhang Le-Qing
1, 2
(color online) 2D structure of a floating body PDSOI NMOSFET.