Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs

Fan Shuang^{1, 2}, Hu Zhi-Yuan^{1, †}, Zhang Zheng-Xuan¹, Ning Bing-Xu¹, Bi Da-Wei¹, Dai Li-Hua^{1, 2}, Zhang Meng-Ying^{1, 2}, Zhang Le-Qing^{1, 2}

(color online) (a) Back-gate transfer characteristics of commercial and radiation-hardened H-gate devices. Devices were measured before irradiation with drain voltage , the source and front gate were grounded. (b) Front-gate threshold voltage shift versus TID for commercial and radiation-hardened H-gate devices.