Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs

Fan Shuang^{1, 2}, Hu Zhi-Yuan^{1, †}, Zhang Zheng-Xuan¹, Ning Bing-Xu¹, Bi Da-Wei¹, Dai Li-Hua^{1, 2}, Zhang Meng-Ying^{1, 2}, Zhang Le-Qing^{1, 2}

(color online) Simulated electron density across the p-type body at the front gate interface with and without BBT. Trapped charge density is fixed at , , , and the substrate and source are grounded.