Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs

Fan Shuang^{1, 2}, Hu Zhi-Yuan^{1, †}, Zhang Zheng-Xuan¹, Ning Bing-Xu¹, Bi Da-Wei¹, Dai Li-Hua^{1, 2}, Zhang Meng-Ying^{1, 2}, Zhang Le-Qing^{1, 2}

(color online) I_DS−V_GS curves of commercial H-gate SOI device before and after irradiation under ON bias condition. The device was measured at V_DS = 3.3 V with forward and reverse VFG sweep. Scan directions are indicated by the arrows in the figure.