Band gap engineering of atomically thin two-dimensional semiconductors<xref rid="cpb_26_3_034208fn1" ref-type="fn">*</xref> <fn id="cpb_26_3_034208fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11374092, 61474040, 61574054, and 61505051), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Science and Technology Department of Hunan Province, China (Grant No. 2014FJ2001).</p> </fn>

Band gap engineering of atomically thin two-dimensional semiconductors* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 11374092, 61474040, 61574054, and 61505051), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Science and Technology Department of Hunan Province, China (Grant No. 2014FJ2001).

Ge Cui-Huan, Li Hong-Lai, Zhu Xiao-Li^‡, Pan An-Lian^†

(color online) (a) EDX mapping of Se, Te, and Ga in a GaTe Se film.^[83] (b) TEM images of GaS multilayered nanosheets.^[84] (c), (d) UV visible diffuse reflectance spectrum (in absorption) and PL spectrum (at 8 K) of the GaS Se nanosheets with various values of x.^[84] (e) Three-dimensional schematic view and the cross section view of the GaSe Te nanoflake device.^[85] (f) Composition-dependent photocurrent of GaTe Se alloys under different laser intensities.^[83]