Band gap engineering of atomically thin two-dimensional semiconductors<xref rid="cpb_26_3_034208fn1" ref-type="fn">*</xref> <fn id="cpb_26_3_034208fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11374092, 61474040, 61574054, and 61505051), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Science and Technology Department of Hunan Province, China (Grant No. 2014FJ2001).</p> </fn>

Band gap engineering of atomically thin two-dimensional semiconductors* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 11374092, 61474040, 61574054, and 61505051), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Science and Technology Department of Hunan Province, China (Grant No. 2014FJ2001).

Ge Cui-Huan, Li Hong-Lai, Zhu Xiao-Li^‡, Pan An-Lian^†

(color online) (a) Formation energy of W Mo Te in both T′ structure (blue) and H structure (red) at various W concentration x.^[80] (b), (c) Free energy landscape at fixed temperature.^[81] (d) Positive (pink) and negative (blue) voltage required to switch the relative stability of H-MoTe and T′-MoTe .^[80] (e), (f) The photoluminescence (PL) spectra of monolayer WSe Te (x = 0–1.0) alloys.^[82]