Band gap engineering of atomically thin two-dimensional semiconductors<xref rid="cpb_26_3_034208fn1" ref-type="fn">*</xref> <fn id="cpb_26_3_034208fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11374092, 61474040, 61574054, and 61505051), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Science and Technology Department of Hunan Province, China (Grant No. 2014FJ2001).</p> </fn>

Band gap engineering of atomically thin two-dimensional semiconductors* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 11374092, 61474040, 61574054, and 61505051), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Science and Technology Department of Hunan Province, China (Grant No. 2014FJ2001).

Ge Cui-Huan, Li Hong-Lai, Zhu Xiao-Li^‡, Pan An-Lian^†

(color online) (a) Top view of the atomic model corresponding to the Mo W Se monolayer.^[76] (b) AFM image of Mo W Se sheets.^[78] (c) HAADF STEM image of Mo W Se flakes. Inset in panel (c) is a high-resolution STEM image, and the scale bar is 3 nm.^[78] (d) Composition-dependent PL spectra of Mo W Se monolayer alloys.^[78] (e) Raman spectra of Mo W Se monolayers with different W composition x.^[78] (f) Differential reflection signal (scattered dots) measured from MoSe , Mo W Se , and Mo W Se monolayers with a 620 nm pump and a 800 nm probe pulse.^[76] Solid curves are biexponential decay fits.^[76] (g) Output curves ( – ) under different bottom gate voltages of Mo W Se monolayer FETs for x = 0.39.^[78]