Atomic crystals resistive switching memory
Liu Chunsen, Zhang David Wei, Zhou Peng
       

(color online) Graphene as built-in selector element to solve sneak leakage path problem.[19,47] (a) The fabrication process of graphene resistive switching: the green film is TaOy, the red film is Ta2O5−x. (b) The switching characteristics of MLG/TaOy/Ta2O5−x/MLG, which shows linearity. (c) The switching characteristics of MLG/Ta2O5−x/TaOy/MLG, which shows significant nonlinearity. (d) The switching characteristics of bottom electrodes: B1 and B2.