(color online) New type of RRAM: resistive switching based on GB (grain boundaries) MoS₂.^[51] (a), (b) Schematic structure and switching characteristics of an intersecting-GB device, respectively. (c), (d) Schematic structure and switching characteristics of a bridge-GB device, respectively. (e), (f) Schematic structure and switching characteristics of a bisecting-GB device, respectively. (g) AFM phase image and spatial mapping of the area under the PL excitonic peaks. Scale bars are 2 μm.