Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode
Guo Min1, 2, Guo Zhi-You1, 2, †, Huang Jing1, Liu Yang1, 2, Yao Shun-Yu1
       

(color online) Plots of theoretical IQE versus injection current for the four structures.