Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode
Guo Min
1, 2
, Guo Zhi-You
1, 2, †
, Huang Jing
1
, Liu Yang
1, 2
, Yao Shun-Yu
1
(color online) Light output power of all structures.