Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode

Guo Min^{1, 2}, Guo Zhi-You^{1, 2, †}, Huang Jing¹, Liu Yang^{1, 2}, Yao Shun-Yu¹

(color online) Carrier concentration for electron (a) and hole (b) at a current density of 350 A·cm⁻²