Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter

Zhang Yu-Hang^†, Chai Chang-Chun, Yu Xin-Hai, Yang Yin-Tang, Liu Yang, Fan Qing-Yang, Shi Chun-Lei

(color online) Simulated upset threshold power dependence on pulse repetitive frequency and reported data in Ref. [15]. The width is specified to be 5 ns and two period pulses are injected in our work.