Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter

Zhang Yu-Hang^†, Chai Chang-Chun, Yu Xin-Hai, Yang Yin-Tang, Liu Yang, Fan Qing-Yang, Shi Chun-Lei

(color online) Distributions of electron current density in near source and bulk terminal of NMOS. (a) At the negative half cycle of injected microwave; (b) at the positive half cycle of injected microwave.