Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter

Zhang Yu-Hang^†, Chai Chang-Chun, Yu Xin-Hai, Yang Yin-Tang, Liu Yang, Fan Qing-Yang, Shi Chun-Lei

(color online) Output voltage response and source current of PMOS under microwave powers of 13.5 dBm (in black) and 19.5 dBm (in red).